20230511_方正证券_半导体行业专题报告：刻蚀工艺双子星大马士革&极高深宽比_33页.pdf

S1220521120003&/2023 5 11 90%&28 2D 3D 40:1/+3D Gartner 2022 22%230 1 2 3 4 Gartner SEMI slidesplayer 2YWEVxOqNmPqRrPpMtOoRrQ8OcM9PsQnNsQoNjMpPtOfQnMoM6MnNwOxNnRrMMYsOxP 1 23&4 ASML 3D 90%90%()(),90%,10%5 VS VS slidesplayer()()(1:1)(500:1)(5:1100:1)6 VS VS slidesplayer 180nm 3%48%47%3%2%RIE ICP-RIE-RIE(120nm/min)(20:1)IC MOS RIE(150:1)IC STI ICP-RIE-RIE(1000nm/min)(CMP)RIE(1000nm/min)7 1 28&+(STI Etch)(Gate Etch)(Spacer Etch)(SiGe Etch)(SMT Etch)(SPT Etch)(DSL)(Contact Etch)(Via Etch)(Metal Etch)(AI-pad Etch)(Passivation Etch)9 Year of HVM(20k/month)2018 2020 2022 2024 2026 2028 2030Node N7 N5 N3 N2 N1.4 N1 N0.7Device32 Fin 2 Fin 21 Fin GAA NS Forksheet CFET 2ndGen.CFETPoly pitch(PP)56 48 45 42 39 36 33Min.MP nm 40 28 22 20 18 16 12Cell height(CH)240(2Fin)210(2Fin)176(2Fin)120(NS)90(NS)64(CFET)48(CFET)Density(a.u.)PPCH DTCO*11.73(vs.N7)1.53(vs.N5)1.81(vs.N3)1.65(vs.N2)1.75(vs.N1.4)1.67(vs.N1.0)Scaling boosterEUVSDB*EUV channelSAGC*Dipole eWFBackside PDNHeterogeneouschannel2D materialAssume new knob will be created in each node*DTCO:Design technology co-optimization*Single Diffusion Break*Self Align Gate Contact 5&3 nm TEL 10 Cu Damascene plating damascene Damascus Dual Damascene BEOL PVD CMP 4%plasma PVD CVD CMP 11 Trench first via photoresist PR exposure development trench via CuVia first via via trench via residue via trench CuSelf-aligned via trench 1.SiN(SiN)2.via trench trench trench via via barrier layer TaN dual Damascene dual via metal Dual Damascene trench first via first self-aligned 123.5 nm 5 nm 7 nm 10 nm BEOL 28 BEOL 16-14 nm Self-aligned via(SAV)Ta/TaN PVDSource:TEL(Estimated using IEDM,VL,IITC papers)Self-aligned block(SAB)Fully self-aligned via(FSAV)Non SAV SAVCu:ECDReplacement of Cu:Ru,Co,CoAl TEL 13 WL 2D 3D NAND HAR(40)90 NAND 3D NAND ILDILDILD WLSiNAND WL DRAM SRAM()()()14NAND 2D 3D Year of HVM(20k/month)2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 2030Stack(1.6x/3years)128L16x19xL(176)22x25xL(240)28x32xL(304)35x4xxL(368)41x45xL(440)5xxL(512)Tier 1 or 2 2 2 2 2 or 3 3 3 or 4Vertical pitch 5055nm 4555nm 4050nm 3545nm 3545nm 3545nm 3540nmMemoryHeight Channel Poly Si grain CIP Incl.MILC Si*WL metal W W W Mo Mo Mo Mo#of memory holes b/w slits9 9 924 1424 19 or 24 19 or 24 19 or 24Peri.CMOS(In general)Under array or Next arrayUnder array Under array or Bonding#of memory holes b/w slitsTier*MILC Si:Metal-induced lateral crystallization silicon Intel TEL 3d Vertical pitch15DRAM Year of HVM(20k/month)2020 2021 2022 2023 2024 2025 2026 202728 202930F*nm 16 1514 1312 1211 10 40 45 50 55 60Peri.CMOS193i SAQP,DP(+EUV)High-k Metal Gate3DAlternative:STO etc.FinFET6F2ZAZ CIPPoly SiON*Feature size:STI hp along WL=STI hp/COS(21)Capacitor stackDRAM capacitor 1Y 1Z 40:1/TEL 16 1 217&+CF4 O2 1819 1/2 1/4 3D 7 5 14 14 2022 20 10 10 20 5 5 10 10 20 5 20 40556511514016028nm 20nm 14nm 10nm 7nm 5nm刻蚀 20%刻蚀 50%2D NAND 3D NAND其他光刻检测清洗沉积刻蚀 2D NAND 3D NAND 14nm 65 7nm 140 5nm 160 NAND 3D 4D 40:1 60:1 3D 96 128 2D NAND 3D NAND 20%50%+3D 2022 230 Gartner 80%Gartner 2022 22%22%17%2022 230 2022 2122%17%22%12%6%4%3%2%1%11%2022 47.9%47.5%3.5%1.1%ICPCCP2022 230 SEMI 2019 90%2019 52%3%2019 52%20%6%53%19%18%10%2019 2019 52%20%9%5%6%8%22 1 223&+24 NMC508M 8 NMC612M 12 TiN NMC612G IC AL NMC508C 8 STI NMC612C12 55nm Logic,65nm NOR flash,55nm CIS,90MCU NMC612D12 STI Gate FinFET DSE200/NMC508DTE 8 IGBT MOSFET Super Junction Deep Trench GDE C200/GSE C200 GaN SiC SiO2 Al2O3 380G+/G380C/380E PSS HSE 8-12+8 MEMS BMD P230 8-12 Descum 2022 12 ICP 2000 12 TSV Chiplet 12 CCP CCP 6/8 SiC GaN 2022 25CCPICP DSC D-RIE DSC AD-RIESSC HD-RIE SSC UD-RIE DSC SD-RIE DSC TSV SSC Nanova SSC Nanova SE/UE/VE/LUXDSC TwinstarDSC SSC SSC Nanova SE/UE/VE SSC Nanova LUX ICP/ICP Primo CCP ICP 2022 2022 475 CCP 59.40%5 3D NAND ICP 20 DRAM 3D NAND 100 ICP 2022 Primo Nanova 297+2022 26 400KHz 2MHz CCP 20:1 60:1 2014 20:1 2018 40:1 2021 60:1 AD-RIE HD-RIE XD-RIE LT M 85%TM CCP CCP L A M 65%ICP ICP TA L 60%T A L CCP CCP L A 75%L A ICP ICP Gartner 2020 0.1%90.24%65 5 1y 2x DRAM 32 128 3D paradigmE Novyka Novyka Novyka paradigmE 10 ICP CCP Gartner 27 Wind 28 Wind 2023 5 10 TTM 2023E 2024E 2025E TTM 2023E 2024E 2025E002371.SZ 1,533.08 27.38 32.35 43.99 57.19 55.99 47.39 34.85 26.81 688012.SH 1,030.54 13.28 14.26 18.08 22.26 77.60 72.28 57.01 46.29 688409.SH 187.06 2.44 3.33 4.93 6.80 76.59 56.22 37.96 27.50 300666.SZ 167.11 2.88 3.86 5.26 6.53 58.08 43.31 31.79 25.58 300260.SZ 146.09 3.19 4.48 6.33 7.81 45.83 32.61 23.06 18.71 300820.SZ 154.14 3.40 4.74 6.43 8.24 45.29 32.52 23.96 18.70 688103.SH 50.85 0.85 1.74 2.81 3.87 59.97 29.16 18.12 13.15 29 C3 20%10%-10%10%10%300 300 300THANKS 48 6 71 2 31 12 2 3 36 37 前沿报告库是中国新经济产业咨询报告共享平台。行业范围涵盖新一代信息技术、5G、物联网、新能源、新材料、新消费、大健康、大数据、智能制造等新兴领域。为企事业单位、科研院所、投融资机构等提供研究和决策参考。扫一扫免费获取海量报告